A High Reliability and Low Loss Lateral RF Micromachined Relay
نویسندگان
چکیده
New lateral metal-contact micromachined switch using high aspect ratio cantilever beam with quasi-finite ground coplanar waveguide (FGCPW) configuration is proposed. It is fabricated by deep reactive ion etching (DRIE) process of silicon-on-insulator (SOI) wafer and shadow mask technology. It has demonstrated the switch operation up to 25 GHz. The insertion loss is less than 0.2 dB and isolation is higher than 23 dB at DC-15 GHz. The switching time is 30 μs.
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تاریخ انتشار 2004